Linewidth roughness in nanowire-mask-based graphene nanoribbons

Journal Article · Mon Jun 13 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3599596· OSTI ID:21518488

Guangyu, Xu; Torres, Jr, Carlos M; Jianshi, Tang; Wang, Kang L ^[1]; Jingwei, Bai; Yu, Huang ^[2]; Tao, Yu ^[3]; Xiangfeng, Duan ^[4]; Yuegang, Zhang ^[5]

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1. Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)
2. Department of Material Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)
3. Institute of Microelectronics, Peking University, Beijing 100871 (China)
4. Department of Chemistry and Biochemistry, University of California at Los Angeles, Los Angeles, California 90095 (United States)
5. Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

We present the analysis of linewidth roughness (LWR) in nanowire-mask-based graphene nanoribbons (GNRs) and evaluate its impact on the device performance. The data show that the LWR amplitude decreases with the GNR width, possibly due to the etching undercut near the edge of a nanowire-mask. We further discuss the large variation in GNR devices in the presence of LWR by analyzing the measured transport properties and on/off ratios.

• OSTI ID: 21518488
• Journal Information: Applied Physics Letters, Vol. 98, Issue 24; Other Information: DOI: 10.1063/1.3599596; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
AMPLITUDES
CARBON
EQUIPMENT
ETCHING
FULLERENES
HONEYCOMB STRUCTURES
LAYERS
NANOSTRUCTURES
QUANTUM WIRES
ROUGHNESS
SPUTTERING
ELEMENTS
MECHANICAL STRUCTURES
NONMETALS
SURFACE FINISHING
SURFACE PROPERTIES