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Title: Defects at nitrogen site in electron-irradiated AlN

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3600638· OSTI ID:21518482
;  [1];  [2];  [3];  [4];  [5];  [6]
  1. Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
  2. Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary)
  3. Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, H-1111 Budapest (Hungary)
  4. Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstrasse 7, D-91058 Erlangen (Germany)
  5. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
  6. Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, Ibaraki 305-8550 (Japan)

In high resistance AlN irradiated with 2 MeV electrons, an electron paramagnetic resonance (EPR) spectrum, labeled EI-1, with an electron spin S=1/2 and a clear hyperfine (hf) structure was observed. The hf structure was shown to be due the interaction between the electron spin and the nuclear spins of four {sup 27}A nuclei with the hf splitting varying between {approx}6.0 and {approx}7.2 mT. Comparing the hf data obtained from EPR and ab initio supercell calculations we suggest the EI-1 defect to be the best candidate for the neutral nitrogen vacancy in AlN.

OSTI ID:
21518482
Journal Information:
Applied Physics Letters, Vol. 98, Issue 24; Other Information: DOI: 10.1063/1.3600638; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English