Thermal conductivity as a metric for the crystalline quality of SrTiO{sub 3} epitaxial layers

Journal Article · Mon May 30 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3579993· OSTI ID:21518466

Oh, Dong-Wook ^[1]; Ravichandran, Jayakanth ^[2]; Liang, Chen-Wei; Martin, Lane W; Cahill, David G ^[3]; Siemons, Wolter ^[4]; Jalan, Bharat; Stemmer, Susanne ^[5]; Brooks, Charles M; Schlom, Darrell G ^[6]; Huijben, Mark ^[7]; Majumdar, Arun ^[8]; Ramesh, Ramamoorthy ^[9]

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1. Energy Plant Research Division, Korea Institute of Machinery and Materials, Daejon 305-343 (Korea, Republic of)
2. Applied Science and Technology Graduate Group, University of California, Berkeley, California 94720 (United States)
3. Department of Materials Science and Engineering, and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
4. Department of Physics, University of California, Berkeley, California 94720 (United States)
5. Department of Materials, University of California, Santa Barbara, California 93106 (United States)
6. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
7. Faculty of Science and Technology, University of Twente, Faculty of Science and Technology, 7500 AE Enschede (Netherlands)
8. Department of Energy, ARPA-E, Washington DC 20585 (United States)
9. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)

Measurements of thermal conductivity {Lambda} by time-domain thermoreflectance in the temperature range 100<T<300 K are used to characterize the crystalline quality of epitaxial layers of a prototypical oxide, SrTiO{sub 3}. Twenty samples from five institutions using two growth techniques, molecular beam epitaxy and pulsed laser deposition (PLD), were analyzed. Optimized growth conditions produce layers with {Lambda} comparable to bulk single crystals. Many PLD layers, particularly those that use ceramics as the target material, show surprisingly low {Lambda}. For homoepitaxial layers, the decrease in {Lambda} created by point defects correlates well with the expansion of the lattice parameter in the direction normal to the surface.

• OSTI ID: 21518466
• Journal Information: Applied Physics Letters, Vol. 98, Issue 22; Other Information: DOI: 10.1063/1.3579993; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CERAMICS
ENERGY BEAM DEPOSITION
LASER RADIATION
LATTICE PARAMETERS
LAYERS
METRICS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
OXIDES
PULSED IRRADIATION
STRONTIUM TITANATES
SURFACES
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
VACANCIES
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
ELECTROMAGNETIC RADIATION
EPITAXY
IRRADIATION
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATIONS
STRONTIUM COMPOUNDS
SURFACE COATING
THERMODYNAMIC PROPERTIES
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS