High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
- State Key laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
- State Key laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
In this letter, we demonstrated a top illuminated 1.55 {mu}m metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded In{sub x}Al{sub 0.4}Ga{sub 1-x-0.4}As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3x10{sup -6} A/cm{sup 2} at 0 V and 4.2x10{sup -5} A/cm{sup 2} at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.
- OSTI ID:
- 21518437
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 20; Other Information: DOI: 10.1063/1.3592569; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
1.59 {mu}m room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates
Journal Article
·
Sat Dec 15 00:00:00 EST 2018
· Semiconductors
·
OSTI ID:21518437
+4 more
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
Journal Article
·
Mon Apr 25 00:00:00 EDT 2011
· Applied Physics Letters
·
OSTI ID:21518437
+6 more
1.59 {mu}m room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates
Journal Article
·
Mon May 26 00:00:00 EDT 2008
· Applied Physics Letters
·
OSTI ID:21518437
+1 more
Related Subjects
36 MATERIALS SCIENCE
BUFFERS
CAVITIES
CAVITY RESONATORS
CURRENT DENSITY
GALLIUM ARSENIDES
GHZ RANGE
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
PHOTODIODES
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
TERNARY ALLOY SYSTEMS
WAVELENGTHS
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
EFFICIENCY
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
FREQUENCY RANGE
GALLIUM COMPOUNDS
MATERIALS
PNICTIDES
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
BUFFERS
CAVITIES
CAVITY RESONATORS
CURRENT DENSITY
GALLIUM ARSENIDES
GHZ RANGE
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
PHOTODIODES
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
TERNARY ALLOY SYSTEMS
WAVELENGTHS
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
EFFICIENCY
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
FREQUENCY RANGE
GALLIUM COMPOUNDS
MATERIALS
PNICTIDES
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES