Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

Journal Article · Mon May 09 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3589810· OSTI ID:21518432

Lee, Yun Seog; Winkler, Mark T; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio ^[1]

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1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

• OSTI ID: 21518432
• Journal Information: Applied Physics Letters, Vol. 98, Issue 19; Other Information: DOI: 10.1063/1.3589810; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER OXIDES
DIRECT CURRENT
HALL EFFECT
MAGNETRONS
MICROSTRUCTURE
MOBILITY
PHOTOVOLTAIC EFFECT
POINT DEFECTS
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
CHALCOGENIDES
COPPER COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
CURRENTS
ELECTRIC CURRENTS
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
FILMS
MATERIALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC EFFECT
TEMPERATURE RANGE
TRANSITION ELEMENT COMPOUNDS