Ohmic contact formation on n-type Ge by direct deposition of TiN

Journal Article · Mon May 09 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3590711· OSTI ID:21518430

Iyota, Masatoshi; Yamamoto, Keisuke ^[1]; Wang, Dong; Yang, Haigui; Nakashima, Hiroshi ^[2]

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1. Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)
2. Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

We succeeded in Ohmic contact formation on an n-Ge substrate by direct sputter deposition from a TiN target and subsequent postmetallization annealing (PMA) at 350 deg. C. The Schottky barrier heights of the TiN/n-Ge and TiN/p-Ge contacts were 0.18 eV and 0.50 eV, respectively, and were maintained up to a PMA temperature of 550 deg. C. These electrical characteristics are likely to be associated with an approximately 1-nm-thick interlayer formed at a TiN/Ge interface, which leads to the alleviation of the Fermi level pinning. We demonstrated the validity of the TiN/n-Ge contact using an n{sup +}/p junction, which showed an excellent ideal factor of n=1.01.

• OSTI ID: 21518430
• Journal Information: Applied Physics Letters, Vol. 98, Issue 19; Other Information: DOI: 10.1063/1.3590711; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANNEALING
DEPOSITION
ELECTRIC CONTACTS
FERMI LEVEL
GERMANIUM
INTERFACES
NITROGEN IONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TITANIUM NITRIDES
CHARGED PARTICLES
ELECTRICAL EQUIPMENT
ELEMENTS
ENERGY LEVELS
EQUIPMENT
HEAT TREATMENTS
IONS
MATERIALS
METALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS