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Title: The influence of impurities and planar defects on the infrared properties of silicon carbide films

Abstract

Two cubic, single crystal silicon carbide (3C-SiC) films with similar thickness are shown to exhibit significantly different optical properties at mid-infrared wavelengths. Depth profiling by time-of-flight secondary ion mass spectroscopy indicates that these two films have substantially different n-type impurity concentrations that are responsible for the observed differences in optical absorption. The influence of impurities manifests as substantially different planar defect morphologies.

Authors:
; ;  [1]; ;  [2];  [3]; ;  [4]
  1. Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712 (United States)
  2. Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)
  3. Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106 (United States)
  4. LMI, UMR-CNRS 5615, Universite Claude Bernard Lyon 1, 69622 Villeurbanne (France)
Publication Date:
OSTI Identifier:
21518429
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 98; Journal Issue: 19; Other Information: DOI: 10.1063/1.3585098; (c) 2011 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ABSORPTION; CRYSTAL DEFECTS; DISTRIBUTION; IMPURITIES; INFRARED SPECTRA; ION MICROPROBE ANALYSIS; IONS; MASS SPECTRA; MASS SPECTROSCOPY; MONOCRYSTALS; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; THICKNESS; THIN FILMS; TIME-OF-FLIGHT METHOD; WAVELENGTHS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; FILMS; MATERIALS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SORPTION; SPECTRA; SPECTROSCOPY

Citation Formats

Rajasekhara, S, Ferreira, P J, Kovar, D, Neuner, III, B H, Shvets, G, Zorman, C A, Jegenyes, N, and Ferro, G. The influence of impurities and planar defects on the infrared properties of silicon carbide films. United States: N. p., 2011. Web. doi:10.1063/1.3585098.
Rajasekhara, S, Ferreira, P J, Kovar, D, Neuner, III, B H, Shvets, G, Zorman, C A, Jegenyes, N, & Ferro, G. The influence of impurities and planar defects on the infrared properties of silicon carbide films. United States. https://doi.org/10.1063/1.3585098
Rajasekhara, S, Ferreira, P J, Kovar, D, Neuner, III, B H, Shvets, G, Zorman, C A, Jegenyes, N, and Ferro, G. 2011. "The influence of impurities and planar defects on the infrared properties of silicon carbide films". United States. https://doi.org/10.1063/1.3585098.
@article{osti_21518429,
title = {The influence of impurities and planar defects on the infrared properties of silicon carbide films},
author = {Rajasekhara, S and Ferreira, P J and Kovar, D and Neuner, III, B H and Shvets, G and Zorman, C A and Jegenyes, N and Ferro, G},
abstractNote = {Two cubic, single crystal silicon carbide (3C-SiC) films with similar thickness are shown to exhibit significantly different optical properties at mid-infrared wavelengths. Depth profiling by time-of-flight secondary ion mass spectroscopy indicates that these two films have substantially different n-type impurity concentrations that are responsible for the observed differences in optical absorption. The influence of impurities manifests as substantially different planar defect morphologies.},
doi = {10.1063/1.3585098},
url = {https://www.osti.gov/biblio/21518429}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 98,
place = {United States},
year = {Mon May 09 00:00:00 EDT 2011},
month = {Mon May 09 00:00:00 EDT 2011}
}