The influence of impurities and planar defects on the infrared properties of silicon carbide films
Abstract
Two cubic, single crystal silicon carbide (3C-SiC) films with similar thickness are shown to exhibit significantly different optical properties at mid-infrared wavelengths. Depth profiling by time-of-flight secondary ion mass spectroscopy indicates that these two films have substantially different n-type impurity concentrations that are responsible for the observed differences in optical absorption. The influence of impurities manifests as substantially different planar defect morphologies.
- Authors:
-
- Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712 (United States)
- Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)
- Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106 (United States)
- LMI, UMR-CNRS 5615, Universite Claude Bernard Lyon 1, 69622 Villeurbanne (France)
- Publication Date:
- OSTI Identifier:
- 21518429
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 98; Journal Issue: 19; Other Information: DOI: 10.1063/1.3585098; (c) 2011 American Institute of Physics; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ABSORPTION; CRYSTAL DEFECTS; DISTRIBUTION; IMPURITIES; INFRARED SPECTRA; ION MICROPROBE ANALYSIS; IONS; MASS SPECTRA; MASS SPECTROSCOPY; MONOCRYSTALS; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; THICKNESS; THIN FILMS; TIME-OF-FLIGHT METHOD; WAVELENGTHS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; FILMS; MATERIALS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SORPTION; SPECTRA; SPECTROSCOPY
Citation Formats
Rajasekhara, S, Ferreira, P J, Kovar, D, Neuner, III, B H, Shvets, G, Zorman, C A, Jegenyes, N, and Ferro, G. The influence of impurities and planar defects on the infrared properties of silicon carbide films. United States: N. p., 2011.
Web. doi:10.1063/1.3585098.
Rajasekhara, S, Ferreira, P J, Kovar, D, Neuner, III, B H, Shvets, G, Zorman, C A, Jegenyes, N, & Ferro, G. The influence of impurities and planar defects on the infrared properties of silicon carbide films. United States. https://doi.org/10.1063/1.3585098
Rajasekhara, S, Ferreira, P J, Kovar, D, Neuner, III, B H, Shvets, G, Zorman, C A, Jegenyes, N, and Ferro, G. 2011.
"The influence of impurities and planar defects on the infrared properties of silicon carbide films". United States. https://doi.org/10.1063/1.3585098.
@article{osti_21518429,
title = {The influence of impurities and planar defects on the infrared properties of silicon carbide films},
author = {Rajasekhara, S and Ferreira, P J and Kovar, D and Neuner, III, B H and Shvets, G and Zorman, C A and Jegenyes, N and Ferro, G},
abstractNote = {Two cubic, single crystal silicon carbide (3C-SiC) films with similar thickness are shown to exhibit significantly different optical properties at mid-infrared wavelengths. Depth profiling by time-of-flight secondary ion mass spectroscopy indicates that these two films have substantially different n-type impurity concentrations that are responsible for the observed differences in optical absorption. The influence of impurities manifests as substantially different planar defect morphologies.},
doi = {10.1063/1.3585098},
url = {https://www.osti.gov/biblio/21518429},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 98,
place = {United States},
year = {Mon May 09 00:00:00 EDT 2011},
month = {Mon May 09 00:00:00 EDT 2011}
}
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