Barrier height of Pt-In{sub x}Ga{sub 1-x}N (0{<=}x{<=}0.5) nanowire Schottky diodes

Journal Article · Mon May 02 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3579143· OSTI ID:21518424

Wei, Guo; Banerjee, Animesh; Meng, Zhang; Bhattacharya, Pallab ^[1]

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1. Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

The barrier height of Schottky diodes made on In{sub x}Ga{sub 1-x}N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are {approx}1 {mu}m, 20 nm, and 1x10{sup 11} cm{sup -2}. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height {Phi}{sub B} varies from 1.4 eV (GaN) to 0.44 eV (In{sub 0.5}Ga{sub 0.5}N) and agrees well with the ideal barrier heights in the Schottky limit.

• OSTI ID: 21518424
• Journal Information: Applied Physics Letters, Vol. 98, Issue 18; Other Information: DOI: 10.1063/1.3579143; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CAPACITANCE
DENSITY
GALLIUM NITRIDES
GROWTH
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PLASMA
PLATINUM
PROCESSING
QUANTUM WIRES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
TERNARY ALLOY SYSTEMS
ALLOY SYSTEMS
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
METALS
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
TRANSITION ELEMENTS