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Title: Synthesis of few-layered graphene by H{sub 2}O{sub 2} plasma etching of graphite

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3589354· OSTI ID:21518423
; ; ;  [1]
  1. Key Lab of Novel Thin Film Solar Cells, Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China)

Herein, we reported an approach to synthesize few-layered graphene by etching of the graphite using H{sub 2}O{sub 2} plasma technique. The synthesized few-layered graphene was characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS). The analysis showed that few-layered graphene was formed in high quality level. The XPS analysis suggested that H{sub 2}O{sub 2} plasma etching of graphite could oxidize graphene and generated -C-OH and >C=O groups on the graphene surfaces. The H{sub 2}O{sub 2} plasma technique is an easy and environmental friendly method to synthesize few-layered graphene from the graphite.

OSTI ID:
21518423
Journal Information:
Applied Physics Letters, Vol. 98, Issue 18; Other Information: DOI: 10.1063/1.3589354; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English