Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination
- Walter Schottky Institut and Physik Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany)
We have developed a straightforward plasma-based method which yields chlorine-terminated n-type 6H-SiC surfaces. Atomic force microscopy shows that the surface roughness is not affected by the plasma processing. Additionally, x-ray photoelectron spectroscopy reveals a significant reduction in oxygen, and a corresponding rise of chlorine core level intensities, following halogen termination. Contact potential difference and surface photovoltage measurements show formation of negative surface dipoles and approximately flat band surface potentials after chlorine termination of (0001) n-type 6H-SiC (built-in voltage V{sub bi}<20 meV). Starting from halogenated surfaces, we demonstrate both ultraviolet light-induced and thermally-induced functionalization with alkene-derived self-assembled organic monolayers.
- OSTI ID:
- 21518417
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 18; Other Information: DOI: 10.1063/1.3587767; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ATOMIC FORCE MICROSCOPY
CHLORINE
DIPOLES
ELECTRIC POTENTIAL
OXYGEN
PASSIVATION
PLASMA
REDUCTION
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SURFACE POTENTIAL
SURFACES
ULTRAVIOLET RADIATION
VISIBLE RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTIONS
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
HALOGENS
MATERIALS
MICROSCOPY
MULTIPOLES
NONMETALS
PHOTOELECTRON SPECTROSCOPY
POTENTIALS
RADIATIONS
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE PROPERTIES