Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

Journal Article · Mon May 02 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3584024· OSTI ID:21518416

Ong, B S; Pey, K L ^[1]; Ong, C Y; Tan, C S ^[2]; Antoniadis, D A ^[1]; Fitzgerald, E A ^[1]

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1. Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore)
2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi{sub 2} metal gate process for In{sub 0.53}Ga{sub 0.47}As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al{sub 2}O{sub 3} as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al{sub 2}O{sub 3} shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.

• OSTI ID: 21518416
• Journal Information: Applied Physics Letters, Vol. 98, Issue 18; Other Information: DOI: 10.1063/1.3584024; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
DIELECTRIC MATERIALS
FLUORINE
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
LAYERS
METALS
MOSFET
PASSIVATION
PHYSICAL VAPOR DEPOSITION
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
THIN FILMS
TUNGSTEN ALLOYS
TUNGSTEN SILICIDES
VAPOR DEPOSITED COATINGS
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
COATINGS
DEPOSITION
ELEMENTS
EVALUATION
FIELD EFFECT TRANSISTORS
FILMS
GALLIUM COMPOUNDS
HALOGENS
INDIUM COMPOUNDS
MATERIALS
MOBILITY
MOS TRANSISTORS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SILICIDES
SILICON COMPOUNDS
SURFACE COATING
TRANSISTORS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS