Strain balanced quantum posts

Journal Article · Mon Apr 25 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3583455· OSTI ID:21518407

Alonso-Alvarez, D; Alen, B; Ripalda, J M; Llorens, J M; Taboada, A G; Briones, F ^[1]; Roldan, M A; Hernandez-Saz, J; Hernandez-Maldonado, D; Herrera, M; Molina, S I ^[2]

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1. IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos (Spain)
2. Departamento de Ciencia de los Materiales e Ing. Metalurgica y Q. I., Universidad de Cadiz, Campus Universitario de Puerto Real, 11510 Puerto Real, Cadiz (Spain)

Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here, we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.

• OSTI ID: 21518407
• Journal Information: Applied Physics Letters, Vol. 98, Issue 17; Other Information: DOI: 10.1063/1.3583455; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ACCURACY
ALLOYS
ANISOTROPY
CRYSTAL DEFECTS
DENSITY
GALLIUM ARSENIDES
GROWTH
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
STRAINS
STRESSES
TERNARY ALLOY SYSTEMS
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS
NANOSTRUCTURES
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES