Direct determination of flat-band voltage for metal/high {kappa} oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation

Journal Article · Mon Apr 25 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3583463· OSTI ID:21518403

Chang, C -L ^[1]; Lee, W C; Chu, L K; Hong, M ^[2]; Kwo, J ^[1]; Chang, Y -M ^[3]

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1. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
2. Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
3. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

We have employed electric-field-induced second-harmonic (EFISH) generation to determine the flat-band voltage (V{sub FB}) of Cr/ALD-Al{sub 2}O{sub 3}/MBE-HfO{sub 2}/n-Si (001) MOS structure. Due to the phase sensitivity of EFISH signal to the electric field in the space charge region, the V{sub FB} of -1.20{+-}0.07 V was determined by analyzing the relative phase change in the EFISH signal as a function of the applied gate voltage. The obtained value is in good agreement with that estimated by the capacitance-voltage measurement. This study demonstrated an all-optical technique to directly determine the flat-band voltage for the high {kappa} oxide/Si heterointerfaces.

• OSTI ID: 21518403
• Journal Information: Applied Physics Letters, Vol. 98, Issue 17; Other Information: DOI: 10.1063/1.3583463; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
BEAMS
CAPACITANCE
CHROMIUM
ELECTRIC FIELDS
ELECTRIC POTENTIAL
HAFNIUM OXIDES
HARMONIC GENERATION
INTERFACES
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
MOS TRANSISTORS
SEMICONDUCTOR MATERIALS
SENSITIVITY
SILICON
SILICON OXIDES
SPACE CHARGE
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FREQUENCY MIXING
HAFNIUM COMPOUNDS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS