Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy
Abstract
We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.
- Authors:
-
- Physikalisches Institut-Experimentalphysik II, Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany)
- TASC National Laboratory, CNR-IOM, S.S. 14 Km 163.5 in AREA Science Park, 34012 Basovizza, Trieste (Italy)
- Universidad Nacional de Colombia, Sede Manizales, Cra 27 64-60 Manizales (Colombia)
- Publication Date:
- OSTI Identifier:
- 21518399
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 98; Journal Issue: 16; Other Information: DOI: 10.1063/1.3581885; (c) 2011 American Institute of Physics; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ANISOTROPY; CRYSTAL GROWTH; HETEROJUNCTIONS; INTERFACES; LANTHANUM COMPOUNDS; MAGNETIC FIELDS; MAGNETORESISTANCE; MANGANATES; MOLECULAR BEAM EPITAXY; SPIN; SPIN ORIENTATION; STRONTIUM COMPOUNDS; STRONTIUM TITANATES; SUPERCONDUCTING JUNCTIONS; SYMMETRY; TEMPERATURE DEPENDENCE; TUNNEL EFFECT; ALKALINE EARTH METAL COMPOUNDS; ANGULAR MOMENTUM; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EPITAXY; MANGANESE COMPOUNDS; ORIENTATION; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Citation Formats
Werner, R, Kleiner, R, Koelle, D, Petrov, A Yu, Davidson, B A, and Mino, L Alvarez. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy. United States: N. p., 2011.
Web. doi:10.1063/1.3581885.
Werner, R, Kleiner, R, Koelle, D, Petrov, A Yu, Davidson, B A, & Mino, L Alvarez. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.3581885
Werner, R, Kleiner, R, Koelle, D, Petrov, A Yu, Davidson, B A, and Mino, L Alvarez. 2011.
"Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.3581885.
@article{osti_21518399,
title = {Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy},
author = {Werner, R and Kleiner, R and Koelle, D and Petrov, A Yu and Davidson, B A and Mino, L Alvarez},
abstractNote = {We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.},
doi = {10.1063/1.3581885},
url = {https://www.osti.gov/biblio/21518399},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 98,
place = {United States},
year = {Mon Apr 18 00:00:00 EDT 2011},
month = {Mon Apr 18 00:00:00 EDT 2011}
}