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Title: Surface reactions as carbon removal mechanism in deposition of silicon dioxide films at atmospheric pressure

Abstract

The deposition of thin SiO{sub x}C{sub y}H{sub z} or SiO{sub x}H{sub y} films by means of an atmospheric pressure microplasma jet with helium/hexamethyldisiloxane (HMDSO)/O{sub 2} mixtures and the surface reactions involving oxygen have been studied. It is shown, that the carbon content in the film can be controlled by choosing the right O{sub 2}/HMDSO ratio in the gas mixture. The microplasma jet geometry and localization of the deposition at a spot of few square millimeters allows studying the role of oxygen in the deposition process. This is done by alternating application of He/HMDSO plasma and He/O{sub 2} plasma to the same deposition area, here achieved by a treatment of a rotating substrate by two jets with above mentioned gas mixtures. It is shown that carbon-free SiO{sub x}H{sub y} film can be deposited in this way and that surface reaction with oxygen is the main loss mechanism of carbon from the film.

Authors:
; ; ;  [1]
  1. Research Department Plasmas with Complex Interactions, Ruhr-University Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)
Publication Date:
OSTI Identifier:
21518322
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 98; Journal Issue: 11; Other Information: DOI: 10.1063/1.3565965; (c) 2011 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ATMOSPHERIC PRESSURE; CARBON COMPOUNDS; DEPOSITION; HYDROGEN COMPOUNDS; MIXTURES; ORGANIC SILICON COMPOUNDS; OXYGEN; PLASMA; REMOVAL; SILICON OXIDES; SUBSTRATES; SURFACES; THIN FILMS; CHALCOGENIDES; DISPERSIONS; ELEMENTS; FILMS; NONMETALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS

Citation Formats

Reuter, R, Ellerweg, D, Keudell, A von, and Benedikt, J. Surface reactions as carbon removal mechanism in deposition of silicon dioxide films at atmospheric pressure. United States: N. p., 2011. Web. doi:10.1063/1.3565965.
Reuter, R, Ellerweg, D, Keudell, A von, & Benedikt, J. Surface reactions as carbon removal mechanism in deposition of silicon dioxide films at atmospheric pressure. United States. https://doi.org/10.1063/1.3565965
Reuter, R, Ellerweg, D, Keudell, A von, and Benedikt, J. 2011. "Surface reactions as carbon removal mechanism in deposition of silicon dioxide films at atmospheric pressure". United States. https://doi.org/10.1063/1.3565965.
@article{osti_21518322,
title = {Surface reactions as carbon removal mechanism in deposition of silicon dioxide films at atmospheric pressure},
author = {Reuter, R and Ellerweg, D and Keudell, A von and Benedikt, J},
abstractNote = {The deposition of thin SiO{sub x}C{sub y}H{sub z} or SiO{sub x}H{sub y} films by means of an atmospheric pressure microplasma jet with helium/hexamethyldisiloxane (HMDSO)/O{sub 2} mixtures and the surface reactions involving oxygen have been studied. It is shown, that the carbon content in the film can be controlled by choosing the right O{sub 2}/HMDSO ratio in the gas mixture. The microplasma jet geometry and localization of the deposition at a spot of few square millimeters allows studying the role of oxygen in the deposition process. This is done by alternating application of He/HMDSO plasma and He/O{sub 2} plasma to the same deposition area, here achieved by a treatment of a rotating substrate by two jets with above mentioned gas mixtures. It is shown that carbon-free SiO{sub x}H{sub y} film can be deposited in this way and that surface reaction with oxygen is the main loss mechanism of carbon from the film.},
doi = {10.1063/1.3565965},
url = {https://www.osti.gov/biblio/21518322}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 98,
place = {United States},
year = {Mon Mar 14 00:00:00 EDT 2011},
month = {Mon Mar 14 00:00:00 EDT 2011}
}