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Title: Growth rate induced monoclinic to tetragonal phase transition in epitaxial BiFeO{sub 3} (001) thin films

Abstract

Epitaxial BiFeO{sub 3} thin films were deposited on SrRuO{sub 3} buffered SrTiO{sub 3} (001) substrates at different growth rates by varying the radio frequency sputtering power. With increasing growth rate, the crystal structure of BiFeO{sub 3} films develops from monoclinic lattice to a mixture phase of tetragonal lattice T{sub 1} with c/a{approx}1.05 and giant tetragonal lattice T{sub 2} with c/a{approx}1.23, finally to a single tetragonal phase T{sub 2}, as shown by high resolution synchrotron x-ray diffraction reciprocal space mappings. The observed phase transitions, induced by film growth rate, offer an alternative strategy to manipulate crystalline phases in epitaxial ferroelectric thin films.

Authors:
 [1];  [2];  [3];  [1]
  1. Department of Materials Science and Engineering, National University of Singapore, Singapore 117574 (Singapore)
  2. Singapore Synchrotron Light Source (SSLS), National University of Singapore (NUS), 5 Research Link, Singapore 117603 (Singapore)
  3. Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), Singapore 117602 (Singapore)
Publication Date:
OSTI Identifier:
21518314
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 98; Journal Issue: 10; Other Information: DOI: 10.1063/1.3561757; (c) 2011 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; CRYSTAL-PHASE TRANSFORMATIONS; DEPOSITION; EPITAXY; FERRITES; FERROELECTRIC MATERIALS; LAYERS; MONOCLINIC LATTICES; OXYGEN COMPOUNDS; RUTHENIUM COMPOUNDS; SPUTTERING; STRONTIUM TITANATES; SUBSTRATES; TETRAGONAL LATTICES; THIN FILMS; X-RAY DIFFRACTION; ALKALINE EARTH METAL COMPOUNDS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; DIELECTRIC MATERIALS; DIFFRACTION; FERRIMAGNETIC MATERIALS; FILMS; IRON COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; PHASE TRANSFORMATIONS; REFRACTORY METAL COMPOUNDS; SCATTERING; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Huajun, Liu, Institute of Materials Research and Engineering, A-STAR, Ping, Yang, Kui, Yao, and Wang, John. Growth rate induced monoclinic to tetragonal phase transition in epitaxial BiFeO{sub 3} (001) thin films. United States: N. p., 2011. Web. doi:10.1063/1.3561757.
Huajun, Liu, Institute of Materials Research and Engineering, A-STAR, Ping, Yang, Kui, Yao, & Wang, John. Growth rate induced monoclinic to tetragonal phase transition in epitaxial BiFeO{sub 3} (001) thin films. United States. https://doi.org/10.1063/1.3561757
Huajun, Liu, Institute of Materials Research and Engineering, A-STAR, Ping, Yang, Kui, Yao, and Wang, John. 2011. "Growth rate induced monoclinic to tetragonal phase transition in epitaxial BiFeO{sub 3} (001) thin films". United States. https://doi.org/10.1063/1.3561757.
@article{osti_21518314,
title = {Growth rate induced monoclinic to tetragonal phase transition in epitaxial BiFeO{sub 3} (001) thin films},
author = {Huajun, Liu and Institute of Materials Research and Engineering, A-STAR and Ping, Yang and Kui, Yao and Wang, John},
abstractNote = {Epitaxial BiFeO{sub 3} thin films were deposited on SrRuO{sub 3} buffered SrTiO{sub 3} (001) substrates at different growth rates by varying the radio frequency sputtering power. With increasing growth rate, the crystal structure of BiFeO{sub 3} films develops from monoclinic lattice to a mixture phase of tetragonal lattice T{sub 1} with c/a{approx}1.05 and giant tetragonal lattice T{sub 2} with c/a{approx}1.23, finally to a single tetragonal phase T{sub 2}, as shown by high resolution synchrotron x-ray diffraction reciprocal space mappings. The observed phase transitions, induced by film growth rate, offer an alternative strategy to manipulate crystalline phases in epitaxial ferroelectric thin films.},
doi = {10.1063/1.3561757},
url = {https://www.osti.gov/biblio/21518314}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 98,
place = {United States},
year = {Mon Mar 07 00:00:00 EST 2011},
month = {Mon Mar 07 00:00:00 EST 2011}
}