Air-gap heterostructures

Journal Article · Mon Jan 17 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3544047· OSTI ID:21518256

Heyn, Ch; Schmidt, M; Schwaiger, S; Stemmann, A; Mendach, S; Hansen, W ^[1]

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1. Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, Jungiusstrasse 11, D-20355 Hamburg (Germany)

We demonstrate the fabrication of thin GaAs layers which quasi hover above the underlying GaAs substrate. The hovering layers have a perfect epitaxial relationship to the substrate crystal lattice and are connected to the substrate surface only by lattice matched nanopillars of low density. These air-gap heterostructures are created by combining in situ molecular beam epitaxy compatible self-assembled droplet-etching and ex situ selective wet-chemical etching.

• OSTI ID: 21518256
• Journal Information: Applied Physics Letters, Vol. 98, Issue 3; Other Information: DOI: 10.1063/1.3544047; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
CRYSTAL LATTICES
DENSITY
DROPLETS
ETCHING
FABRICATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
EPITAXY
FILMS
FLUIDS
GALLIUM COMPOUNDS
GASES
MATERIALS
PARTICLES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SURFACE FINISHING