Suppression of donor-vacancy clusters in germanium by concurrent annealing and irradiation

Journal Article · Mon Jan 03 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3534791· OSTI ID:21518238

Schneider, S; Bracht, H ^[1]

---

1. Institut fuer Materialphysik, Westfaelische Wilhelms-Universitaet Muenster, 48149 Muenster (Germany)

Diffusion of phosphorous and arsenic in germanium under in situ proton irradiation has been performed and analyzed with secondary ion mass spectrometry. Dopant profiles corresponding to proton-exposed regions exhibit a higher penetration depth and more pronounced box shape than profiles of nonexposed regions. Continuum theoretical simulations reveal that diffusion under irradiation is much less affected by inactive donor-vacancy clusters than diffusion under annealing only. The suppression of donor-vacancy clusters is caused by interstitials in supersaturation and vacancy concentrations close to thermal equilibrium. Concurrent annealing and irradiation have the potential to attain high active doping levels in Ge.

• OSTI ID: 21518238
• Journal Information: Applied Physics Letters, Vol. 98, Issue 1; Other Information: DOI: 10.1063/1.3534791; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANNEALING
ARSENIC
CRYSTALS
DIFFUSION
GERMANIUM
INTERSTITIALS
IONS
IRRADIATION
MASS SPECTRA
MASS SPECTROSCOPY
PENETRATION DEPTH
PHOSPHORUS
PROTON BEAMS
SEMICONDUCTOR MATERIALS
SIMULATION
SUPERSATURATION
THERMAL EQUILIBRIUM
VACANCIES
BEAMS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
EQUILIBRIUM
HEAT TREATMENTS
MATERIALS
METALS
NONMETALS
NUCLEON BEAMS
PARTICLE BEAMS
POINT DEFECTS
SATURATION
SEMIMETALS
SPECTRA
SPECTROSCOPY