Coherent heteroepitaxy of Bi{sub 2}Se{sub 3} on GaAs (111)B
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- Department of Physics, University of California, Santa Barbara, California 93106 (United States)
We report the heteroepitaxy of single crystal thin films of Bi{sub 2}Se{sub 3} on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi{sub 2}Se{sub 3} grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi{sub 2}Se{sub 3}, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.
- OSTI ID:
- 21518227
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 26; Other Information: DOI: 10.1063/1.3532845; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BISMUTH SELENIDES
COHERENT PRODUCTION
GALLIUM ARSENIDES
INTERFACES
MAGNETO-OPTICAL EFFECTS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
OPTIMIZATION
SEMICONDUCTOR MATERIALS
SPECTRA
SPIN
SUBSTRATES
THIN FILMS
TIME RESOLUTION
ANGULAR MOMENTUM
ARSENIC COMPOUNDS
ARSENIDES
BISMUTH COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CRYSTALS
EPITAXY
FILMS
GALLIUM COMPOUNDS
INTERACTIONS
MATERIALS
PARTICLE INTERACTIONS
PARTICLE PRODUCTION
PARTICLE PROPERTIES
PNICTIDES
RESOLUTION
SELENIDES
SELENIUM COMPOUNDS
TIMING PROPERTIES
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BISMUTH SELENIDES
COHERENT PRODUCTION
GALLIUM ARSENIDES
INTERFACES
MAGNETO-OPTICAL EFFECTS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
OPTIMIZATION
SEMICONDUCTOR MATERIALS
SPECTRA
SPIN
SUBSTRATES
THIN FILMS
TIME RESOLUTION
ANGULAR MOMENTUM
ARSENIC COMPOUNDS
ARSENIDES
BISMUTH COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CRYSTALS
EPITAXY
FILMS
GALLIUM COMPOUNDS
INTERACTIONS
MATERIALS
PARTICLE INTERACTIONS
PARTICLE PRODUCTION
PARTICLE PROPERTIES
PNICTIDES
RESOLUTION
SELENIDES
SELENIUM COMPOUNDS
TIMING PROPERTIES