Development and characterization of high temperature stable Ta-W-Si-C amorphous metal gates

Journal Article · Mon Nov 29 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3508952· OSTI ID:21518195

Grubbs, Melody E; Clemens, Bruce M ^[1]; Xiao, Zhang; Deal, Michael; Nishi, Yoshio ^[2]

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1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
2. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

Threshold voltage variability ({sigma}{sub Vth}) due to the polycrystalline nature of current metal gates has been identified as a problem in future generations of complementary metal oxide semiconductor (CMOS) devices. Amorphous metal Ta{sub 40}W{sub 40}Si{sub 10}C{sub 10} gates are introduced in this work as a remedy. It was found that Ta-W-Si-C films remain amorphous at temperatures as high as 1120 deg. C, have n-type work functions, and are stable on HfO{sub 2}. This alloy is a promising gate-first compatible material that has the potential to significantly reduce {sigma}{sub Vth}.

• OSTI ID: 21518195
• Journal Information: Applied Physics Letters, Vol. 97, Issue 22; Other Information: DOI: 10.1063/1.3508952; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
CARBON COMPOUNDS
DEPOSITION
HAFNIUM OXIDES
METALS
MOS TRANSISTORS
POLYCRYSTALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SPUTTERING
TANTALUM ALLOYS
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TUNGSTEN ALLOYS
WORK FUNCTIONS
ALLOYS
CHALCOGENIDES
CRYSTALS
ELEMENTS
FILMS
FUNCTIONS
HAFNIUM COMPOUNDS
HEAT TREATMENTS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
REFRACTORY METAL COMPOUNDS
TEMPERATURE RANGE
TRANSISTORS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPOUNDS