skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method For Silicon Surface Texturing Using Ion Implantation

Abstract

As the semiconductor industry continues to show more interest in the photovoltaic market, cheaper and readily integrable methods of silicon solar cell production are desired. One of these methods - ion implantation - is well-developed and optimized in all commercial semiconductor fabrication facilities. Here we have developed a silicon surface texturing technique predicated upon the phenomenon of surface blistering of H-implanted silicon, using only ion implantation and thermal annealing. We find that following the H implant with a second, heavier implant markedly enhances the surface blistering, causing large trenches that act as a surface texturing of c-Si. We have found that this method reduces total broadband Si reflectance from 35% to below 5percent;. In addition, we have used Rutherford backscattering/channeling measurements investigate the effect of ion implantation on the crystallinity of the sample. The data suggests that implantation-induced lattice damage is recovered upon annealing, reproducing the original monocrystalline structure in the previously amorphized region, while at the same time retaining the textured surface.

Authors:
; ; ;  [1]
  1. College of Nanoscale Science and Engineering, State University of New York at Albany, 255 Fuller Road, Albany NY 12203 (United States)
Publication Date:
OSTI Identifier:
21513375
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1336; Journal Issue: 1; Conference: CAARI 2010: 21. International Conference on the Application of Accelerators in Research and Industry, Fort Worth, TX (United States), 8-13 Aug 2010; Other Information: DOI: 10.1063/1.3586115; (c) 2011 American Institute of Physics; Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CHANNELING; DAMAGE; DIFFUSION; FABRICATION; IMPLANTS; INDUSTRY; ION IMPLANTATION; PHOTOVOLTAIC EFFECT; PHYSICAL RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SILICON SOLAR CELLS; SURFACES; TEXTURE; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; RADIATION EFFECTS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; SPECTROSCOPY

Citation Formats

Kadakia, Nirag, Naczas, Sebastian, Bakhru, Hassaram, and Mengbing, Huang. Method For Silicon Surface Texturing Using Ion Implantation. United States: N. p., 2011. Web. doi:10.1063/1.3586115.
Kadakia, Nirag, Naczas, Sebastian, Bakhru, Hassaram, & Mengbing, Huang. Method For Silicon Surface Texturing Using Ion Implantation. United States. https://doi.org/10.1063/1.3586115
Kadakia, Nirag, Naczas, Sebastian, Bakhru, Hassaram, and Mengbing, Huang. 2011. "Method For Silicon Surface Texturing Using Ion Implantation". United States. https://doi.org/10.1063/1.3586115.
@article{osti_21513375,
title = {Method For Silicon Surface Texturing Using Ion Implantation},
author = {Kadakia, Nirag and Naczas, Sebastian and Bakhru, Hassaram and Mengbing, Huang},
abstractNote = {As the semiconductor industry continues to show more interest in the photovoltaic market, cheaper and readily integrable methods of silicon solar cell production are desired. One of these methods - ion implantation - is well-developed and optimized in all commercial semiconductor fabrication facilities. Here we have developed a silicon surface texturing technique predicated upon the phenomenon of surface blistering of H-implanted silicon, using only ion implantation and thermal annealing. We find that following the H implant with a second, heavier implant markedly enhances the surface blistering, causing large trenches that act as a surface texturing of c-Si. We have found that this method reduces total broadband Si reflectance from 35% to below 5percent;. In addition, we have used Rutherford backscattering/channeling measurements investigate the effect of ion implantation on the crystallinity of the sample. The data suggests that implantation-induced lattice damage is recovered upon annealing, reproducing the original monocrystalline structure in the previously amorphized region, while at the same time retaining the textured surface.},
doi = {10.1063/1.3586115},
url = {https://www.osti.gov/biblio/21513375}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1336,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 2011},
month = {Wed Jun 01 00:00:00 EDT 2011}
}