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Title: Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3587031· OSTI ID:21513235
;  [1];  [2]
  1. School of Physics, Universiti Sains Malaysia, 11800-Penang (Malaysia)
  2. Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Department of electronic engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.

OSTI ID:
21513235
Journal Information:
AIP Conference Proceedings, Vol. 1341, Issue 1; Conference: Escinano2010: 2010 international conference on enabling science and nanotechnology, Kuala Lumpur (Malaysia), 1-3 Dec 2010; Other Information: DOI: 10.1063/1.3587031; (c) 2011 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English