Universal Velocity-Field Characteristics for a Nanowire Arbitrary Degeneracy

Journal Article · Wed May 25 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3586975· OSTI ID:21513226

Chek, Desmond C. Y.; Hashim, Abdul Manaf ^[1]; Tan, Michael Loong Peng ^[1]; Arora, Vijay K ^[1]

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1. Faculty of Electrical Eng., Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

The effects of electric field on the carrier motion and drift velocity in nanowire (NW) are presented in this paper. When the electric field is applied in NW, the electron is expected to move in anti-parallel direction to the electric field. This is so-called randomness motion is transformed into streamlined motion in extremely high electric field. The normalized Fermi energy and relative electron population as a function of electric field are examined for various degeneracies. It was found that the electric field has lesser influence on the relative electron population with the increased degeneracy. The drift velocity in NW is shown to increase with electric field until it reaches the saturation velocity. Two approximations have been made to simplify the theoretical equation. It is also shown in this paper that when the quantum emission is taken into account, the drift and saturation velocity degrades.

• OSTI ID: 21513226
• Journal Information: AIP Conference Proceedings, Vol. 1341, Issue 1; Conference: Escinano2010: 2010 international conference on enabling science and nanotechnology, Kuala Lumpur (Malaysia), 1-3 Dec 2010; Other Information: DOI: 10.1063/1.3586975; (c) 2011 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
APPROXIMATIONS
CARRIERS
ELECTRIC FIELDS
ELECTROCHEMISTRY
ELECTRONS
EMISSION
EQUATIONS
FIELD EFFECT TRANSISTORS
QUANTUM WIRES
RANDOMNESS
SATURATION
VELOCITY
CALCULATION METHODS
CHEMISTRY
ELEMENTARY PARTICLES
FERMIONS
LEPTONS
NANOSTRUCTURES
SEMICONDUCTOR DEVICES
TRANSISTORS