SEN Ultra-High Energy Implanter (UHE) Developed for Next Generation Image Sensors

Journal Article · Fri Jan 07 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548422· OSTI ID:21513145

Suetsugu, Noriyuki; Tsukihara, Mitsukuni; Fuse, Genshu; Ueno, Kazuyoshi; Sugitani, Michiro ^[1]

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1. SEN Corporation, 1501 Imazaike, Saijo Ehime, 799-1362 (Japan)

The UHE is an ultra-high energy implanter developed by SEN Corporation. It was derived from the NV-GSD-HE3 by adding six RF resonators to the beam line. This extends performance so that singly charged boron ions can reach 2 MeV with beam current of 0.75 mA. The maximum energy for triple charged boron is 5 MeV with beam current of 1p{mu}A. For phosphorus ions, the UHE can accelerate doubly charged ions up to 4.4 MeV with beam current of 0.35 mA and quadruply charged ions up to 8 MeV with beam current of 1 p{mu}A. The primary application of the UHE is the image sensor market where it is used to increase the depth of CCD photodiodes into the surface of the wafer and thereby permit higher pixel density for image sensors. The second purpose is to improve productivity for relatively high boron doses at energies around 3 MeV. In order to address certain CCD defects, the system includes a state-of-the-art beam profile controller which allows optimization of implant damage and micro-uniformity. The ULE is currently used in production of high-end CCD's.

• OSTI ID: 21513145
• Journal Information: AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548422; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAM CURRENTS
BEAM PROFILES
BORON IONS
CHARGE-COUPLED DEVICES
CRYSTAL DEFECTS
DENSITY
GENETICALLY SIGNIFICANT DOSE
IMAGES
IMPLANTS
ION BEAMS
MEV RANGE 01-10
OPTIMIZATION
PHOSPHORUS IONS
PHOTODIODES
PRODUCTIVITY
RESONATORS
RF SYSTEMS
SENSORS
SURFACES
BEAMS
CHARGED PARTICLES
CRYSTAL STRUCTURE
CURRENTS
DOSES
ELECTRONIC EQUIPMENT
ENERGY RANGE
EQUIPMENT
IONS
MEV RANGE
PHYSICAL PROPERTIES
RADIATION DOSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES