Colossal Electroresistive Properties Of CSD Grown Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} Films For Nonvolatile Memory Applications

Journal Article · Wed Dec 01 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3530530· OSTI ID:21511328

Bhavsar, K H; Joshi, U S ^[1]

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1. Department of Physics, University School of Sciences, Gujarat University, Ahmedabad-380 009 (India)

Colossal electroresistance effects upon application of electric field in perovskite oxide Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}(PCMO) thin films, which is a promising candidate for resistance random access memory (RRAM) device have been investigated. Nanocrystalline PCMO films were grown on SiO{sub 2} substrates by chemical solution deposition and crystallized at 700 deg. C under different gas atmospheres. Four terminal current voltage characteristics of Ag/PCMO/Ag planar geometry exhibited a sharp transition from a low resistance state (LRS) to a high resistance state (HRS) with a resistance switching ratio of as high as 1100% at room temperature. Nonvolatility and high retention was confirmed by electric pulse induced resistive switching measurements. The resistance switching ratios were found to depend on the annealing conditions, suggesting an interaction between the nonlattice oxygen and oxygen vacancies and/or the cationic vacancy.

• OSTI ID: 21511328
• Journal Information: AIP Conference Proceedings, Vol. 1313, Issue 1; Conference: PEFM-2010: International conference on physics of emerging functional materials, Mumbai (India), 22-24 Sep 2010; Other Information: DOI: 10.1063/1.3530530; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMIC FORCE MICROSCOPY
CALCIUM COMPOUNDS
CRYSTALS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
INTERACTIONS
MAGNETORESISTANCE
MANGANESE COMPOUNDS
MEMORY DEVICES
NANOSTRUCTURES
OXYGEN
OXYGEN COMPOUNDS
PEROVSKITE
PRASEODYMIUM COMPOUNDS
RANDOMNESS
SILICON OXIDES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
VACANCIES
X-RAY DIFFRACTION
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
HEAT TREATMENTS
MICROSCOPY
MINERALS
NONMETALS
OXIDE MINERALS
OXIDES
PEROVSKITES
PHYSICAL PROPERTIES
POINT DEFECTS
RARE EARTH COMPOUNDS
SCATTERING
SILICON COMPOUNDS
TEMPERATURE RANGE
TRANSITION ELEMENT COMPOUNDS