Improving Ion Implanter Productivity with In-situ Cleaning

Journal Article · Fri Jan 07 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548438· OSTI ID:21510121

Bishop, Steve ^[1]; Perry, Alfred ^[2]

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1. ATMI Inc., 7 Commerce Drive, Danbury CT (United States)
2. Analog Devices, 804 Woburn Street, Wilmington, MA (United States)

Ion source lifetime is generally a critical factor in overall implanter productivity. However, extended ion source life only provides value in a manufacturing environment if the ion beam remains stable. As an ion source ages, apertures and insulators become coated with conductive dopant residues which cause beam instabilities, resulting in implant stoppages. These stoppages create failures and/or assists which are logged in the implanter's data files. Analog Devices has recently evaluated in-situ ion source cleaning based on use of xenon difluoride chemistry. The paper will describe how the in-situ cleaning decreased logged failures/assists, resulting in increased implanter productivity.

• OSTI ID: 21510121
• Journal Information: AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548438; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
APERTURES
CLEANING
ELECTRODES
EQUIPMENT
FAILURES
IMPLANTS
INSTABILITY
ION BEAMS
ION IMPLANTATION
ION SOURCES
LIFETIME
MANUFACTURING
PRODUCTIVITY
BEAMS
OPENINGS