Nissin Ion Doping System--H{sub 2}{sup +} Implantation for Silicon Layer Exfoliation
- PrO Unlimited (on assignment at Corning Incorporated) Corning NY 14831 (United States)
- Corning Incorporated, Corning NY 14831 (United States)
- Nissin Ion Equipment Co., Ltd., 29, Hinokigaoka, Minakuchi-cho, Koka, Shiga, 528-0068888 (Japan)
A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end-station with robotic handling for GEN 4 glass substrates was redesigned, and a new end-station was built to handle rectangular silicon tiles (23x18 cm). A three sub-system modular risk reduction process was used to test production solutions, and maximize the success of transferring the R and D implant recipes developed on a standard focused beam ion implanter to the Nissin broad beam iG4 solution. The silicon tile end-station including the implant scanning system was tested for reliability and durability. The end-station handled rectangular silicon tiles reliably without detrimental edge chipping or silicon breakage. The ion optics was demonstrated to successfully provide stable hydrogen ions for the Corning registered silicon on glass layer transfer process. This layer transfer process is very susceptible and sensitive to the implant processing temperature. The temperature excursions during implant processing for the iG4 exfoliation process were found to be in line with the R and D focused ion beam system. This data confirmed the system production-readiness in providing an efficient solution for the high volume production of hydrogen implanted silicon rectangular tiles.
- OSTI ID:
- 21510119
- Journal Information:
- AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548430; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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