Characteristics of ZnO Wafers Implanted with 60 keV Sn{sup +} Ions at Room Temperature and at 110 K
Abstract
ZnO wafers implanted with 60 keV Sn{sup +} ions at room temperature (RT) and at 110 K are investigated by means of X-ray diffraction (XRD) and photoluminescence (PL) techniques. The effect of implantation temperature is evident in the XRD and PL data. A yellow-orange (YO) band near 600 nm appears in the PL spectra of the ZnO wafers implanted to the doses of 4x10{sup 14} and 8x10{sup 14} ions/cm{sup 2} at RT. The intensity of this band increases and the peak position blue-shifts after illumination of the samples with the 325 nm line of a He-Cd laser. The PL data suggests that the CB (conduction band){yields}V{sub O}{sup +} and Zn{sub i}{sup +{yields}}V{sub Zn}{sup -} transitions contribute to the photoemission of the YO band.
- Authors:
-
- Department of Environmental Systems Engineering, Kochi University of Technology, Kami, Kochi 782-8502 (Japan)
- Research Institute for Nano-devices, Kochi University of Technology, Kami, Kochi 782-8502 (Japan)
- Department of Mechanical Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)
- Publication Date:
- OSTI Identifier:
- 21510103
- Resource Type:
- Journal Article
- Journal Name:
- AIP Conference Proceedings
- Additional Journal Information:
- Journal Volume: 1321; Journal Issue: 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548372; (c) 2010 American Institute of Physics; Journal ID: ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ILLUMINANCE; ION IMPLANTATION; KEV RANGE 10-100; LASER RADIATION; PHOTOEMISSION; PHOTOLUMINESCENCE; SPECTRA; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TIN IONS; X-RAY DIFFRACTION; ZINC OXIDES; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY RANGE; IONS; KEV RANGE; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SCATTERING; SECONDARY EMISSION; TEMPERATURE RANGE; ZINC COMPOUNDS
Citation Formats
Dang, Giang T, Taniwaki, Masafumi, Kawaharamura, Toshiyuki, Hirao, Takashi, and Nitta, Noriko. Characteristics of ZnO Wafers Implanted with 60 keV Sn{sup +} Ions at Room Temperature and at 110 K. United States: N. p., 2011.
Web. doi:10.1063/1.3548372.
Dang, Giang T, Taniwaki, Masafumi, Kawaharamura, Toshiyuki, Hirao, Takashi, & Nitta, Noriko. Characteristics of ZnO Wafers Implanted with 60 keV Sn{sup +} Ions at Room Temperature and at 110 K. United States. https://doi.org/10.1063/1.3548372
Dang, Giang T, Taniwaki, Masafumi, Kawaharamura, Toshiyuki, Hirao, Takashi, and Nitta, Noriko. 2011.
"Characteristics of ZnO Wafers Implanted with 60 keV Sn{sup +} Ions at Room Temperature and at 110 K". United States. https://doi.org/10.1063/1.3548372.
@article{osti_21510103,
title = {Characteristics of ZnO Wafers Implanted with 60 keV Sn{sup +} Ions at Room Temperature and at 110 K},
author = {Dang, Giang T and Taniwaki, Masafumi and Kawaharamura, Toshiyuki and Hirao, Takashi and Nitta, Noriko},
abstractNote = {ZnO wafers implanted with 60 keV Sn{sup +} ions at room temperature (RT) and at 110 K are investigated by means of X-ray diffraction (XRD) and photoluminescence (PL) techniques. The effect of implantation temperature is evident in the XRD and PL data. A yellow-orange (YO) band near 600 nm appears in the PL spectra of the ZnO wafers implanted to the doses of 4x10{sup 14} and 8x10{sup 14} ions/cm{sup 2} at RT. The intensity of this band increases and the peak position blue-shifts after illumination of the samples with the 325 nm line of a He-Cd laser. The PL data suggests that the CB (conduction band){yields}V{sub O}{sup +} and Zn{sub i}{sup +{yields}}V{sub Zn}{sup -} transitions contribute to the photoemission of the YO band.},
doi = {10.1063/1.3548372},
url = {https://www.osti.gov/biblio/21510103},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1321,
place = {United States},
year = {Fri Jan 07 00:00:00 EST 2011},
month = {Fri Jan 07 00:00:00 EST 2011}
}
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