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Title: Electron Backscattered Diffraction Analysis Of Narrow Copper Interconnects In Cross-View To Investigate Scale Effect On Microstructure

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3527137· OSTI ID:21506810
 [1]; ;  [1];  [2]
  1. STMicroelectronics, 850 rue Jean Monnet 38926 Crolles Cedex (France)
  2. SIMaP, 1130 rue de la Piscine BP 75 38402 St Martin D'Heres Cedex (France)

In this article, we propose to use Electron Backscattered Diffraction (EBSD) to characterize microstructure of copper interconnects of thin metal level in top view and cross view. These two views give very complementary information about microstructure of copper and thus about recrystallization of copper during annealing. Moreover, for minimum width, as interconnect is two times thicker than wide; It will be easier to analyze smaller interconnect of 45 nm node technology in cross-section. We look for evolution of texture and microstructure of copper with line width in top view and in cross view. We highlight the presence of two recrystallization mechanisms and also the fact that transition from one to the other is progressive with competition of both mechanisms.

OSTI ID:
21506810
Journal Information:
AIP Conference Proceedings, Vol. 1300, Issue 1; Conference: 11. international workshop on stress-induced phenomena in metallization, Bad Schandau (Germany), 12-14 Apr 2010; Other Information: DOI: 10.1063/1.3527137; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English