Electron Backscattered Diffraction Analysis Of Narrow Copper Interconnects In Cross-View To Investigate Scale Effect On Microstructure
- STMicroelectronics, 850 rue Jean Monnet 38926 Crolles Cedex (France)
- SIMaP, 1130 rue de la Piscine BP 75 38402 St Martin D'Heres Cedex (France)
In this article, we propose to use Electron Backscattered Diffraction (EBSD) to characterize microstructure of copper interconnects of thin metal level in top view and cross view. These two views give very complementary information about microstructure of copper and thus about recrystallization of copper during annealing. Moreover, for minimum width, as interconnect is two times thicker than wide; It will be easier to analyze smaller interconnect of 45 nm node technology in cross-section. We look for evolution of texture and microstructure of copper with line width in top view and in cross view. We highlight the presence of two recrystallization mechanisms and also the fact that transition from one to the other is progressive with competition of both mechanisms.
- OSTI ID:
- 21506810
- Journal Information:
- AIP Conference Proceedings, Vol. 1300, Issue 1; Conference: 11. international workshop on stress-induced phenomena in metallization, Bad Schandau (Germany), 12-14 Apr 2010; Other Information: DOI: 10.1063/1.3527137; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electron Backscatter Diffraction (EBSD) Characterization of Uranium and Uranium Alloys
Microstructural evolution in adiabatic shear bands of copper at high strain rates: Electron backscatter diffraction characterization
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BACKSCATTERING
COPPER
CROSS SECTIONS
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
ELECTRONS
EVOLUTION
LINE WIDTHS
MICROSTRUCTURE
RECRYSTALLIZATION
TEXTURE
COHERENT SCATTERING
DIFFRACTION
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HEAT TREATMENTS
LEPTONS
METALS
SCATTERING
TRANSITION ELEMENTS