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Title: A New Methodology For In-Situ Residual Stress Measurement In MEMS Structures

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3527116· OSTI ID:21506807
;  [1]; ;  [2];  [3]
  1. University of ''ROMA TRE'', Mechanical and Industrial Engineering Dept, Via della Vasca Navale 79-00146 Rome (Italy)
  2. Consorzio OPTEL, SS n.7 per Mesagne, Km 7, 300, 72100 Brindisi (Italy)
  3. Department of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, England (United Kingdom)

In this paper, a new approach is presented for local residual stress measurement in MEMS structures. The newly proposed approach involves incremental focused ion beam (FIB) milling of annular trenches at material surface, combined with high resolution SEM imaging and Digital Image Correlation (DIC) analysis for the measurement of the strain relief over the surface of the remaining central pillar. The proposed technique allows investigating the average residual stress on suspended micro-structures, with a spatial resolution lower than 1 {mu}m. Results are presented for residual stress measurement on double clamped micro-beams, whose layers are obtained by DC-sputtering (PVD) deposition. Residual stresses were also independently measured by the conventional curvature method (Stoney's equation) on a similar homogeneous coating obtained by the same deposition parameters and a comparison and discussion of obtained results is performed.

OSTI ID:
21506807
Journal Information:
AIP Conference Proceedings, Vol. 1300, Issue 1; Conference: 11. international workshop on stress-induced phenomena in metallization, Bad Schandau (Germany), 12-14 Apr 2010; Other Information: DOI: 10.1063/1.3527116; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English