Crystal, electronic structure and electronic transport properties of the Ti{sub 1-x}V{sub x}NiSn (x=0-0.10) solid solutions

Journal Article · Wed Dec 15 00:00:00 EST 2010 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2010.09.042· OSTI ID:21494158

Stadnyk, Yu; Horyn', A; Romaka, V V; Gorelenko, Yu; Romaka, L P ^[1]; Fruchart, D ^[2]

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1. Ivan Franko National University of Lviv, Kyrila and Mefodiya str., 6, 79005 Lviv (Ukraine)
2. Institut Neel, CNRS, Universite Joseph Fourier, BP 166, 38042 Grenoble (France)

The n-TiNiSn ternary intermetallic semiconductor is doped by the V donor impurity and the crystalline structure of the obtained Ti{sub 1-x}V{sub x}NiSn solid solutions (x=0-0.10) is determined by X-ray diffraction. Temperature and concentration dependences of the resistivity and thermopower are investigated in 80-380 K range. As main results, the TiNiSn conductivity type is revealed insensitive to V doping and the thermopower factor substantially increases versus V content. First principle calculations based on DFT using FPLO and KKR-CPA methods are performed as well. Experimental data and electronic structure calculations are compared and discussed in terms of thermopower improvements. -- Graphical abstract: Both approaches experimental and calculations point to the same conclusions. Resisitivity, power factor and thermopower estimations indicate that doping of TiNiSn based compound by the V induces insulator-metal transition without change of the negative sign of S thermopower. Vanadium is revealed as donor impurity.

• OSTI ID: 21494158
• Journal Information: Journal of Solid State Chemistry, Vol. 183, Issue 12; Other Information: DOI: 10.1016/j.jssc.2010.09.042; PII: S0022-4596(10)00441-X; Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
NICKEL ALLOYS
SEMICONDUCTOR MATERIALS
SOLID SOLUTIONS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TIN ALLOYS
TITANIUM ALLOYS
X-RAY DIFFRACTION
ALLOYS
COHERENT SCATTERING
DIFFRACTION
DISPERSIONS
ELECTRICAL PROPERTIES
HOMOGENEOUS MIXTURES
MATERIALS
MIXTURES
PHYSICAL PROPERTIES
SCATTERING
SOLUTIONS
TEMPERATURE RANGE
TRANSITION ELEMENT ALLOYS