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Title: Crystalline III-V semiconductor fibers and whiskers by a low-temperature solution route

Conference ·
OSTI ID:214934
; ;  [1]
  1. Washington State Univ., St. Louis, MO (United States)

We have developed a solution-phase synthesis of crystalline GaAs and InP, according to the equation below, that makes use of the Solution-Liquid-Solid (SLS) mechanistic pathway. The SLS mechanism is analogous to the previously known, Vapor-Liquid-Solid (VLS) mechanism, which is conducted at higher temperatures under CVD conditions. The formation of crystalline semiconductors under SLS conditions requires both a molten flux and protic catalyst to be present. The material produced consists of polycrystalline, zinc-blende fibers and whiskers with a [111] growth direction, as analyzed by selected-area diffraction in the TEM.

OSTI ID:
214934
Report Number(s):
CONF-950801-; TRN: 96:000922-0421
Resource Relation:
Conference: 210. national meeting of the American Chemical Society (ACS), Chicago, IL (United States), 20-25 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of 210th ACS national meeting. Part 1 and 2; PB: 1866 p.
Country of Publication:
United States
Language:
English