Influence of Ag thickness on structural, optical, and electrical properties of ZnS/Ag/ZnS multilayers prepared by ion beam assisted deposition

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3490787· OSTI ID:21476508

Jian, Leng; Zhinong, Yu; Wei, Xue; Ting, Zhang; Yurong, Jiang; Jie, Zhang; Dongpu, Zhang ^[1]

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1. School of Optoelectronics, Beijing Institute of Technology, Beijing 100081 (China)

The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass have been investigated as a function of Ag layer thickness. The characteristics of ZAZ multilayer are significantly improved up insertion of optimal Ag thickness between ZnS layers. The results show that due to bombardment of Ar ion beam, distinct Ag islands evolve into continuous Ag films at a thin Ag thickness of about 4 nm. The thinner Ag film as a thickness of 2 nm leads to high sheet resistance and low transmittance for the interface scattering induced by the Ag islands or noncontinuous films; and when the Ag thickness is over 4 nm, the ZAZ multilayer exhibits a remarkably reduced sheet resistance between 7-80 {Omega}/sq for the increase in carrier concentration and mobility of Ag layer, and a high transmittance over 90% for the interference phenomena of multilayers and low absorption and surface scattering of Ag layer. The ZAZ multilayer with 14 nm Ag film has a figure of merit up to 6.32x10{sup -2} {Omega}{sup -1}, an average transmittance over 92% and a sheet resistance of 7.1 {Omega}/sq. The results suggest that ZAZ film has better optoelectrical properties than conditional indium tin oxide single layer.

• OSTI ID: 21476508
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 7; Other Information: DOI: 10.1063/1.3490787; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL GROWTH
DEPOSITION
ELECTRIC CONDUCTIVITY
INDIUM
INTERFACES
ION BEAMS
LAYERS
LIGHT TRANSMISSION
OPACITY
SEMICONDUCTOR MATERIALS
SILVER
SURFACES
THICKNESS
THIN FILMS
TIN OXIDES
ZINC SULFIDES
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
DIMENSIONS
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
INORGANIC PHOSPHORS
IONS
MATERIALS
METALS
MOBILITY
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHOSPHORS
PHYSICAL PROPERTIES
SULFIDES
SULFUR COMPOUNDS
TIN COMPOUNDS
TRANSITION ELEMENTS
TRANSMISSION
ZINC COMPOUNDS