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Title: Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition

Abstract

This study investigates the influence of the deposition temperature T{sub d} on the Si-mediated excitation of Er ions within silicon-rich silicon oxide layers obtained by magnetron cosputtering. For T{sub d} exceeding 200 deg. C, an efficient indirect excitation of Er ions is observed for all as-deposited samples. The photoluminescence intensity improves gradually up to a maximum at T{sub d}=600 deg. C before decreasing for higher T{sub d} values. The effects of this ''growth-induced annealing'' are compared to those resulting from the same thermal budget used for the ''classical'' approach of postdeposition annealing performed after a room temperature deposition. It is demonstrated that the former approach is highly beneficial, not only in terms of saving time but also in the fourfold enhancement of the Er photoluminescence efficiency.

Authors:
; ; ; ; ; ;  [1]; ;  [2]
  1. Centre de Recherche sur les Ions, les Materiaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, Universite de Caen, 14050 CAEN Cedex (France)
  2. Dept. Electronica, MIND-IN2UB, Universitat de Barcelona, Marti i Fanques 1, 08028 Barcelona, CAT (Spain)
Publication Date:
OSTI Identifier:
21476470
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 108; Journal Issue: 6; Other Information: DOI: 10.1063/1.3481375; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CRYSTAL GROWTH; DEPOSITION; ENERGY TRANSFER; ERBIUM; ERBIUM IONS; EXCITATION; HEATING; LAYERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SILICA; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; FILMS; HEAT TREATMENTS; IONS; LUMINESCENCE; METALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RARE EARTHS; SEMIMETALS; SILICON COMPOUNDS

Citation Formats

Cueff, Sebastien, Labbe, Christophe, Cardin, Julien, Doualan, Jean-Louis, Khomenkova, Larysa, Hijazi, Khalil, Rizk, Richard, Jambois, Olivier, and Garrido, Blas. Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition. United States: N. p., 2010. Web. doi:10.1063/1.3481375.
Cueff, Sebastien, Labbe, Christophe, Cardin, Julien, Doualan, Jean-Louis, Khomenkova, Larysa, Hijazi, Khalil, Rizk, Richard, Jambois, Olivier, & Garrido, Blas. Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition. United States. https://doi.org/10.1063/1.3481375
Cueff, Sebastien, Labbe, Christophe, Cardin, Julien, Doualan, Jean-Louis, Khomenkova, Larysa, Hijazi, Khalil, Rizk, Richard, Jambois, Olivier, and Garrido, Blas. 2010. "Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition". United States. https://doi.org/10.1063/1.3481375.
@article{osti_21476470,
title = {Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition},
author = {Cueff, Sebastien and Labbe, Christophe and Cardin, Julien and Doualan, Jean-Louis and Khomenkova, Larysa and Hijazi, Khalil and Rizk, Richard and Jambois, Olivier and Garrido, Blas},
abstractNote = {This study investigates the influence of the deposition temperature T{sub d} on the Si-mediated excitation of Er ions within silicon-rich silicon oxide layers obtained by magnetron cosputtering. For T{sub d} exceeding 200 deg. C, an efficient indirect excitation of Er ions is observed for all as-deposited samples. The photoluminescence intensity improves gradually up to a maximum at T{sub d}=600 deg. C before decreasing for higher T{sub d} values. The effects of this ''growth-induced annealing'' are compared to those resulting from the same thermal budget used for the ''classical'' approach of postdeposition annealing performed after a room temperature deposition. It is demonstrated that the former approach is highly beneficial, not only in terms of saving time but also in the fourfold enhancement of the Er photoluminescence efficiency.},
doi = {10.1063/1.3481375},
url = {https://www.osti.gov/biblio/21476470}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 108,
place = {United States},
year = {Wed Sep 15 00:00:00 EDT 2010},
month = {Wed Sep 15 00:00:00 EDT 2010}
}