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Title: Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

Abstract

Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

Authors:
; ;  [1]; ; ; ;  [2]
  1. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
  2. CIMAP, CEA/UMR CNRS 6252/ENSICAEN, Universite de Caen Basse Normandie, 6 Boulevard Marechal Juin, 14050 Caen (France)
Publication Date:
OSTI Identifier:
21476463
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 108; Journal Issue: 6; Other Information: DOI: 10.1063/1.3484039; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTALS; DEPOSITION; DOPED MATERIALS; EXCITATION; GALLIUM OXIDES; GRAIN SIZE; MATRIX MATERIALS; NANOSTRUCTURES; NEODYMIUM; NEODYMIUM IONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE DEPENDENCE; THIN FILMS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; FILMS; GALLIUM COMPOUNDS; IONS; LUMINESCENCE; MATERIALS; METALS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; RARE EARTHS; SIZE

Citation Formats

Podhorodecki, A, Banski, M, Misiewicz, J, Lecerf, C, Marie, P, Cardin, J, and Portier, X. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films. United States: N. p., 2010. Web. doi:10.1063/1.3484039.
Podhorodecki, A, Banski, M, Misiewicz, J, Lecerf, C, Marie, P, Cardin, J, & Portier, X. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films. United States. https://doi.org/10.1063/1.3484039
Podhorodecki, A, Banski, M, Misiewicz, J, Lecerf, C, Marie, P, Cardin, J, and Portier, X. 2010. "Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films". United States. https://doi.org/10.1063/1.3484039.
@article{osti_21476463,
title = {Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films},
author = {Podhorodecki, A and Banski, M and Misiewicz, J and Lecerf, C and Marie, P and Cardin, J and Portier, X},
abstractNote = {Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.},
doi = {10.1063/1.3484039},
url = {https://www.osti.gov/biblio/21476463}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 108,
place = {United States},
year = {Wed Sep 15 00:00:00 EDT 2010},
month = {Wed Sep 15 00:00:00 EDT 2010}
}