Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3467967· OSTI ID:21476371

Qiuyuan, Lu; Fu, Ricky K. Y.; Chu, Paul K ^[1]; Zhuo, Wang; Liuhe, Li ^[1]

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1. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)

Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density.

• OSTI ID: 21476371
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 3; Other Information: DOI: 10.1063/1.3467967; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
36 MATERIALS SCIENCE
COMPUTERIZED SIMULATION
ELECTRIC POTENTIAL
GLOW DISCHARGES
HYDROGEN
ION IMPLANTATION
NITROGEN
PLASMA
PLASMA DENSITY
PLASMA SIMULATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON IONS
CHARGED PARTICLES
ELECTRIC DISCHARGES
ELEMENTS
IONS
MATERIALS
NONMETALS
SEMIMETALS
SIMULATION