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Title: Microstructure and initial growth characteristics of nanocrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition with highly H{sub 2} dilution of SiH{sub 4}

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3445876· OSTI ID:21476328
; ; ; ;  [1]
  1. Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041 (China)

Nanocrystalline silicon (nc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H{sub 2} dilution of SiH{sub 4} has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. It is found that at early growth stage the initial amorphous incubation layer in nc-Si:H growth on silicon oxide can be almost eliminated and crystallites with diameter of about 6 to 10 nm are directly formed on the silicon oxide. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. It is considered that highly H{sub 2} dilution and higher excitation frequency are the main reason for eliminating the initial amorphous incubation layer in nc-Si:H growth on silicon oxide.

OSTI ID:
21476328
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 12; Other Information: DOI: 10.1063/1.3445876; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English