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Title: Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal n-ZnO

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3427562· OSTI ID:21476255
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  1. Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly Thege Miklos ut 29-33 (Hungary)
  3. NIMS Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

We investigated the Schottky barrier height (SBH) behavior of binary alloy Schottky contacts on n-type zinc oxide (n-ZnO) single crystals. Pt-Ru alloy electrodes were deposited on the Zn-polar and O-polar faces of ZnO substrates by combinatorial ion-beam deposition under identical conditions. The crystal structures of the Pt-Ru alloy film changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram with decreasing Pt content. The SBH, determined from current-voltage measurements, decreased with decreasing Pt content, indicating that the SBH behavior also followed the Pt-Ru alloy phase diagram. The alloy electrodes on the Zn-polar face showed better Schottky properties than those on the O-polar face. Hard x-ray photoelectron spectroscopy revealed a difference in the interface oxidization of the Pt-Ru alloy: the interface of the O-polar face and Pt-Ru mixed phase with poor crystallinity had a more oxidized layer than that of the Zn-polar face. As a result of this oxidization, the O-polar face, Pt-Ru mixed, and Ru phases showed poor Schottky properties.

OSTI ID:
21476255
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 10; Other Information: DOI: 10.1063/1.3427562; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English