Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy

Journal Article · Sat May 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3388077· OSTI ID:21476185

Fedoryshyn, Y; Kaspar, P; Jaeckel, H ^[1]; Beck, M ^[2]

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1. Electronics Laboratory, ETH Zurich, 8092 Zurich (Switzerland)
2. Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

Bulk InGaAs layers were grown at 400 deg. C lattice-matched to InP semi-insulating substrates by molecular beam epitaxy. Si doping of the layers was performed by applying volume- and delta-doping techniques. The samples were characterized by capacitance-voltage, van der Pauw-Hall, secondary ion mass spectroscopy and photoluminescence measurements. Good agreement in terms of dependence of mobility and Burstein-Moss shift shift on doping concentration in samples doped by the two different techniques was obtained. Amphoteric behavior of Si was observed at doping concentrations higher than {approx}2.9x10{sup 19} cm{sup -3} in both delta- and volume-doped samples. Degradation of InGaAs crystalline quality occurred in samples with Si concentrations higher than {approx}4x10{sup 19} cm{sup -3}.

• OSTI ID: 21476185
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 9; Other Information: DOI: 10.1063/1.3388077; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CARRIER MOBILITY
CONCENTRATION RATIO
CRYSTAL GROWTH
DOPED MATERIALS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ION MICROPROBE ANALYSIS
LAYERS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL ANALYSIS
CRYSTAL GROWTH METHODS
DIMENSIONLESS NUMBERS
ELECTRICAL PROPERTIES
ELEMENTS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS
MICROANALYSIS
MOBILITY
NONDESTRUCTIVE ANALYSIS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SPECTROSCOPY