Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

Journal Article · Sat May 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3391127· OSTI ID:21476183

Londos, C A; Andrianakis, A; Sgourou, E N ^[1]; Emtsev, V ^[2]; Ohyama, H ^[3]

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1. Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, Athens 157 84 (Greece)
2. Ioffe Physicotechnical Institute of the Russian Academy of Sciences, Politeknicheskaya ul. 26, 194021 St. Petersburg (Russian Federation)
3. Kumamoto National College of Technology, 26592, Nishigoshi, Kumamoto 861-1102 (Japan)

This paper is devoted to the annealing studies of defects produced in carbon-rich Ge-doped Czochralski-grown Si (Cz-Si) by 2 MeV electron irradiation. The annealing temperature of vacancy-oxygen (VO) complexes, carbon interstitial-oxygen interstitial (C{sub i}O{sub i}), and carbon interstitial-carbon substitutional (C{sub i}C{sub s}) pairs as well as the formation temperature of vacancy-two oxygen (VO{sub 2}) complexes are monitored as a function of Ge concentration. It has been established that the annealing of C{sub i}O{sub i} and C{sub i}C{sub s} defects remains practically unaffected by the Ge presence, whereas the annealing temperature of VO defects and the formation temperature of VO{sub 2} complexes are substantially lowered at Ge concentrations larger than 1x10{sup 19} cm{sup -3}. The hydrostatic component of elastic strains introduced by Ge atoms in the Si crystal lattice was calculated. It appears to be very small, at least insufficient to exert a pronounced effect upon the annealing behavior of radiation-produced defects. This conclusion is in line with what is observed for the C{sub i}O{sub i} and C{sub i}C{sub s} species. In the case of VO, whose annealing process in Cz-Si is concurrently conducted by two reaction paths VO+O{sub i}{yields}VO{sub 2} and VO+Si{sub I}{yields}O{sub i}, we suggest that the latter reaction in Ge-doped Cz-Si is enhanced by emitting self-interstitials (Si{sub I}) from loosely bound self-interstitial clusters predominantly formed around Ge impurity atoms. As a result, the liberation of self-interstitials at lower annealing temperatures leads to an enhanced annealing of VO defects. An enhanced formation of VO{sub 2} complexes at lower temperatures is also discussed in terms of other reactions running in parallel with the reaction VO+Si{sub I}{yields}O{sub i}.

• OSTI ID: 21476183
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 9; Other Information: DOI: 10.1063/1.3391127; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CARBON
CRYSTAL LATTICES
CRYSTALS
DOPED MATERIALS
ELASTICITY
ELECTRON BEAMS
GERMANIUM
INTERSTITIALS
IRRADIATION
OXYGEN
PHYSICAL RADIATION EFFECTS
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SILICON
STRAINS
VACANCIES
VANADIUM OXIDES
BEAMS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
LEPTON BEAMS
MATERIALS
MECHANICAL PROPERTIES
METALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
STRESSES
TRANSITION ELEMENT COMPOUNDS
VANADIUM COMPOUNDS