Submicron surface patterning by laser ablation with short UV pulses using a proximity phase mask setup

Journal Article · Mon Mar 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3331409· OSTI ID:21476156

Borchers, B; Bekesi, J; Simon, P; Ihlemann, J ^[1]

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1. Laser-Laboratorium Goettingen e.V., Hans-Adolf-Krebs-Weg 1, 37077 Goettingen (Germany)

A new approach for the generation of large-area periodic surface structures on different materials, like polymers and semiconductors, by direct laser ablation is presented. The surfaces were illuminated with the interference pattern emerging in close proximity behind a laser irradiated phase mask. In the experiments, nanosecond and picosecond laser pulses at 248 nm were applied. To prevent contamination or damage of the phase mask caused by the ablated material, the mask is protected by a thin water film or a thin quartz plate. In addition we present a technique to eliminate a lateral variation of the generated structures due to insufficient alignment precision of the workpiece.

• OSTI ID: 21476156
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 6; Other Information: DOI: 10.1063/1.3331409; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
INTERFERENCE
LASER RADIATION
LIQUIDS
PERIODICITY
POLYMERS
PULSES
QUARTZ
SEMICONDUCTOR MATERIALS
SILICON
SURFACE TREATMENTS
SURFACES
THIN FILMS
WATER
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
FLUIDS
HYDROGEN COMPOUNDS
MATERIALS
MINERALS
OXIDE MINERALS
OXYGEN COMPOUNDS
RADIATIONS
SEMIMETALS
VARIATIONS