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Title: Emission in argon and krypton at 147 nm excited by runaway-electron-induced diffusion discharge

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
;  [1]; ; ;  [2]
  1. Research Center 'Vavilov State Optical Institute', St.Petersburg (Russian Federation)
  2. Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences, Tomsk (Russian Federation)

Plasma emission of a pulsed diffuse discharge produced at increased pressures due to the preionisation of the gap by runaway electrons is studied in argon, krypton, and xenon. Nanosecond voltage pulses with the amplitude {approx}220 kV were applied to the discharge gap. It is shown that the presence of xenon ({approx}0.01%) in argon and krypton leads to the emergence of high-power narrowband radiation at awavelength of 147 nm. It is assumed that this radiation belongs to the bands of heteronuclear molecules Xe*Ar and Xe*Kr.

OSTI ID:
21471398
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 40, Issue 3; Other Information: DOI: 10.1070/QE2010v040n03ABEH014246; ISSN 1063-7818
Country of Publication:
United States
Language:
English