Emission in argon and krypton at 147 nm excited by runaway-electron-induced diffusion discharge
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Research Center 'Vavilov State Optical Institute', St.Petersburg (Russian Federation)
- Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences, Tomsk (Russian Federation)
Plasma emission of a pulsed diffuse discharge produced at increased pressures due to the preionisation of the gap by runaway electrons is studied in argon, krypton, and xenon. Nanosecond voltage pulses with the amplitude {approx}220 kV were applied to the discharge gap. It is shown that the presence of xenon ({approx}0.01%) in argon and krypton leads to the emergence of high-power narrowband radiation at awavelength of 147 nm. It is assumed that this radiation belongs to the bands of heteronuclear molecules Xe*Ar and Xe*Kr.
- OSTI ID:
- 21471398
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 40, Issue 3; Other Information: DOI: 10.1070/QE2010v040n03ABEH014246; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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