Yb:KYW microchip laser with self-frequency Raman conversion

Journal Article · Fri Feb 28 00:00:00 EST 2003 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2003V033N02ABEH002378· OSTI ID:21470260

Grabtchikov, A S; Kuzmin, A N; Lisinetskii, V A; Orlovich, V A ^[1]; Voitovich, A P; Demidovich, A A ^[2]; Eichler, H J ^[3]; Titov, A N ^[4]

---

1. B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus)
2. Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, Minsk (Belarus)
3. Optisches Institut, Technische Universitat, Berlin (Germany)
4. All-Russian Scientific Centre 'S.I. Vavilov State Optical Institute', St Petersburg (Russian Federation)

Passively Q-switched and cw operation regimes of a diode-pumped Yb:KYW microchip laser have been investigated. The maximum slope efficiency for cw operation of 23% relative to incident pump power has been achieved. Self-frequency Raman conversion for microchip cavity configuration has been realised. (lasers)

• OSTI ID: 21470260
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 33, Issue 2; Other Information: DOI: 10.1070/QE2003v033n02ABEH002378; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
CONVERSION
EFFICIENCY
ELECTRON BEAM PUMPING
LASER CAVITIES
LASERS
MICROPROCESSORS
Q-SWITCHING
RAMAN EFFECT
YTTERBIUM
ELECTRICAL PUMPING
ELECTRONIC CIRCUITS
ELEMENTS
METALS
MICROELECTRONIC CIRCUITS
PUMPING
RARE EARTHS