Topological insulator Bi{sub 2}Se{sub 3} thin films grown on double-layer graphene by molecular beam epitaxy

Journal Article · Mon Oct 04 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3494595· OSTI ID:21467005

Canli, Song; Yeping, Jiang; Cuizu, Chang; Qikun, Xue ^[1]; Yilin, Wang; Yi, Zhang; Lili, Wang; Ke, He; Zhong, Fang; Xi, Dai; Xincheng, Xie; Xucun, Ma ^[1]; Xi, Chen; Jinfeng, Jia; Yayu, Wang ^[2]; Xiaoliang, Qi; Shoucheng, Zhang ^[3]

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1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
2. Department of Physics, Tsinghua University, Beijing 100084 (China)
3. Department of Physics, Stanford University, Stanford, California 94305-4045 (United States)

Atomically flat thin films of topological insulator Bi{sub 2}Se{sub 3} have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi{sub 2}Se{sub 3} films. The as-grown films without doping exhibit a low defect density of 1.0{+-}0.2x10{sup 11}/cm{sup 2}, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

• OSTI ID: 21467005
• Journal Information: Applied Physics Letters, Vol. 97, Issue 14; Other Information: DOI: 10.1063/1.3494595; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH SELENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
DIELECTRIC MATERIALS
ELECTRON DIFFRACTION
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
REFLECTION
SCANNING TUNNELING MICROSCOPY
SILICON CARBIDES
SUBSTRATES
THIN FILMS
TOPOLOGY
BISMUTH COMPOUNDS
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON SPECTROSCOPY
EMISSION
EPITAXY
FILMS
MATERIALS
MATHEMATICS
MICROSCOPY
SCATTERING
SECONDARY EMISSION
SELENIDES
SELENIUM COMPOUNDS
SILICON COMPOUNDS
SPECTROSCOPY