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Title: Third generation biosensing matrix based on Fe-implanted ZnO thin film

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3496456· OSTI ID:21466943
; ;  [1]; ;  [2]
  1. Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)
  2. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 {mu}A mM{sup -1} cm{sup -2} and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.

OSTI ID:
21466943
Journal Information:
Applied Physics Letters, Vol. 97, Issue 13; Other Information: DOI: 10.1063/1.3496456; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English