Localized ultraviolet photoresponse in single bent ZnO micro/nanowires

Journal Article · Mon Sep 27 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3495939· OSTI ID:21466942

Wen, Guo; Ya, Yang; Junjie, Qi; Jing, Zhao; Yue, Zhang ^[1]

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1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

The localized ultraviolet photoresponse in single bent ZnO micro/nanowires bridging two Ohmic contacts has been investigated. The ZnO micro/nanowire has a higher photoresponse sensitivity of about 190% at the bent region (bending strain: about 4%) than that at the straight region (about 50%). The rise and decay time constants are almost the same in the straight and bent regions of the ZnO micro/nanowire. A possible mechanism has been proposed and discussed. The bent ZnO micro/nanowires could be potentially useful for fabricating the coupled piezoelectric and optoelectronic nanodevices.

• OSTI ID: 21466942
• Journal Information: Applied Physics Letters, Vol. 97, Issue 13; Other Information: DOI: 10.1063/1.3495939; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
BENDING
ENERGY GAP
FABRICATION
PHOTOCONDUCTIVITY
PIEZOELECTRICITY
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SENSITIVITY
STRAINS
ULTRAVIOLET RADIATION
ULTRAVIOLET SPECTRA
ZINC OXIDES
CHALCOGENIDES
DEFORMATION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRICITY
ELECTROMAGNETIC RADIATION
MATERIALS
NANOSTRUCTURES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
SPECTRA
ZINC COMPOUNDS