Insertion of an organic interlayer for hole current enhancement in inverted organic light emitting devices

Journal Article · Mon Aug 09 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3478007· OSTI ID:21466890

Park, Soon Mi ^[1]; Kim, Yoon Hak; Yi, Yeonjin; Won Kim, Jeong ^[1]; Oh, Hyoung-Yun ^[2]

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1. Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)
2. LG Display R and D Center, 1007 Deongeun-ri, Wollong-myeon, Paju-si Gyeonggi-do 413-811 (Korea, Republic of)

We report the enhancement of hole current density in the hole transport part of an inverted top-emission organic light emitted diode by applying an organic insertion layer of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN). Poor hole transporting performance of Al/4,4{sup '}-bis(N-phenyl-1-naphthylamino)biphenyl (NPB)/indium tin oxide is greatly improved by the HAT-CN insertion between Al and NPB layer. The highest occupied molecular orbital level onset of the NPB bends toward Fermi level at the HAT-CN/NPB interface. This extra charge generation layer made of pure organic molecules substantially enhances hole injection from Al anode as revealed by the results of ultraviolet photoelectron spectroscopy and J-V measurement data.

• OSTI ID: 21466890
• Journal Information: Applied Physics Letters, Vol. 97, Issue 6; Other Information: DOI: 10.1063/1.3478007; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANODES
BIPHENYL
CURRENT DENSITY
CYANIDES
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
FERMI LEVEL
HOLES
INTERFACES
LAYERS
LIGHT EMITTING DIODES
MOLECULAR ORBITAL METHOD
PERFORMANCE
PHOTOELECTRON SPECTROSCOPY
PHOTON EMISSION
TIN OXIDES
ULTRAVIOLET RADIATION
AROMATICS
CALCULATION METHODS
CHALCOGENIDES
CURRENTS
ELECTRICAL PROPERTIES
ELECTRODES
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
EMISSION
ENERGY LEVELS
HYDROCARBONS
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY
TIN COMPOUNDS