Semiconductor optical amplifiers for the 1000-1100-nm spectral range

Journal Article · Thu Jul 31 00:00:00 EDT 2008 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2008V038N07ABEH013824· OSTI ID:21466862

Lobintsov, A A; Shramenko, M V ^[1]; Yakubovich, S D ^[2]

---

1. Superlum Diodes Ltd., Moscow (Russian Federation)
2. Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

• OSTI ID: 21466862
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 38, Issue 7; Other Information: DOI: 10.1070/QE2008v038n07ABEH013824; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
GAIN
GALLIUM ARSENIDES
LASERS
LAYERS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TUNING
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
PNICTIDES