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Title: Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ; ; ; ;  [1]; ; ;  [2]; ; ;  [3]
  1. Russian Federal Nuclear Center 'All-Russian Scientific Research Institute of Experimental Physics', Sarov, Nizhnii Novgorod Region (Russian Federation)
  2. Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)
  3. A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy. (active media)

OSTI ID:
21466510
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 38, Issue 12; Other Information: DOI: 10.1070/QE2008v038n12ABEH013848; ISSN 1063-7818
Country of Publication:
United States
Language:
English