Measurement of thermal conductivity of polycrystalline CVD diamond by laser-induced transient grating technique

Journal Article · Tue Apr 30 00:00:00 EDT 2002 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2002V032N04ABEH002200· OSTI ID:21454780

Ivakin, E V; Sukhodolov, A V ^[1]; Ralchenko, V G; Vlasov, A V ^[2]; Khomich, A V ^[3]

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1. B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus)
2. Natural Science Center, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
3. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow (Russian Federation)

The tangential thermal diffusivity D{sub ||} and thermal conductivity k{sub ||} of diamond plates grown from the gaseous phase by chemical vapour deposition (CVD diamond) are determined by the transient grating technique in the temperature range 25 - 200 {sup 0}C. Samples of insulating and boron-doped polycrystalline diamond of thickness about 0.3 mm and diameter 63 mm were synthesised in a microwave discharge in mixtures of methane and hydrogen. In view of the intense light scattering by the samples, a photosensitive grating recording technique was developed and used for measurements. It was found that the value k{sub ||} amounts to 18 - 20 W cm{sup -1} K{sup -1} at room temperature, approaching the thermal conductivity of the highest purity single crystals of diamond. A comparison of the value of k{sub ||} with the normal thermal conductivity k{sub perpendicular} determined by the flash method reveals a thermal conductivity anisotropy of about 10% - 20% associated with the texture of the diamond film, the normal component of thermal conductivity being larger than the tangential component. Boron-doped diamond displays a dependence of the transient grating kinetics on the excitation wavelength. The obtained results indicate that CVD diamond is a promising material for preparing efficient heat sinks, especially of large size, used in microelectronic devices and laser engineering. (laser applications and other topics in quantum electronics)

• OSTI ID: 21454780
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 32, Issue 4; Other Information: DOI: 10.1070/QE2002v032n04ABEH002200; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
BORON
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIAMONDS
DOPED MATERIALS
EXCITATION
GRATINGS
HEAT SINKS
HIGH-FREQUENCY DISCHARGES
HYDROGEN
LASERS
LIGHT SCATTERING
METHANE
MONOCRYSTALS
PLATES
POLYCRYSTALS
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
THERMAL DIFFUSIVITY
THIN FILMS
WAVELENGTHS
ALKANES
CARBON
CHEMICAL COATING
CRYSTALS
DEPOSITION
ELECTRIC DISCHARGES
ELEMENTS
ENERGY-LEVEL TRANSITIONS
FILMS
HYDROCARBONS
MATERIALS
MINERALS
NONMETALS
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
SCATTERING
SEMIMETALS
SINKS
SURFACE COATING
TEMPERATURE RANGE
THERMODYNAMIC PROPERTIES